UPA2810T1L MOSFET Datasheet: P-Ch, 30V, 13A. Full specification with pinout and replacement list

UPA2810T1L Specs and Replacement

Type Designator: UPA2810T1L

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: HVSON

UPA2810T1L substitution

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UPA2810T1L datasheet

..1. Size:268K renesas
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

8.1. Size:165K renesas
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Data Sheet PA2812T1L R07DS0762EJ0101 P-channel MOSFEF Rev.1.01 May 28, 2013 30 V, 30 A, 4.8 m Description The PA2812T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 4.8 m MAX. (VGS = -10 V, ID = -30... See More ⇒

8.2. Size:220K renesas
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Preliminary Data Sheet R07DS0191EJ0100 PA2811T1L Rev.1.00 Jan 11, 2011 MOS FIELD EFFECT TRANSISTOR Description The PA2811T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS -30 V (TA = 25 C) Low on-state resistance RDS(on) = 15 m MAX. (VGS = -10 V, ID = -19 A) ... See More ⇒

8.3. Size:159K renesas
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Data Sheet PA2814T1S R07DS0776EJ0101 P-channel MOSFET Rev.1.01 May 28, 2013 30 V, 24 A, 7.8 m Description The PA2814T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 7.8 m MAX. (VGS = -10 V, ID = -24... See More ⇒