UPA2811T1L MOSFET. Datasheet pdf. Equivalent
Type Designator: UPA2811T1L
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 19 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 30 nC
trⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 310 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: HVSON
UPA2811T1L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UPA2811T1L Datasheet (PDF)
upa2811t1l.pdf
Preliminary Data Sheet R07DS0191EJ0100 PA2811T1L Rev.1.00Jan 11, 2011MOS FIELD EFFECT TRANSISTOR Description The PA2811T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS -30 V (TA = 25C) Low on-state resistance RDS(on) = 15 m MAX. (VGS = -10 V, ID = -19 A)
upa2812t1l.pdf
Data SheetPA2812T1L R07DS0762EJ0101P-channel MOSFEF Rev.1.01May 28, 201330 V, 30 A, 4.8 m Description The PA2812T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 4.8 m MAX. (VGS = -10 V, ID = -30
upa2810t1l.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa2814t1s.pdf
Data SheetPA2814T1S R07DS0776EJ0101P-channel MOSFET Rev.1.01May 28, 201330 V, 24 A, 7.8 m Description The PA2814T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 7.8 m MAX. (VGS = -10 V, ID = -24
upa2813t1l.pdf
Data SheetPA2813T1L R07DS0763EJ0102P-channel MOSFET Rev.1.02May. 28, 201330 V, 27 A, 6.2 m Description The PA2813T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 6.2 m MAX. (VGS = -10 V, ID = -2
upa2815t1s.pdf
Data SheetPA2815T1S R07DS0777EJ0101P-channel MOSFET Rev.1.01May 28, 201330 V, 21 A, 11 m Description The PA2815T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 11 m MAX. (VGS = -10 V, ID = -21 A
upa2816t1s.pdf
Data SheetPA2816T1S R07DS0778EJ0101P-channel MOSFET Rev.1.01May 28, 201330 V, 17 A, 15.5 m Description The PA2816T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 15.5 m MAX. (VGS = -10 V, ID = -
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