UPA2814T1S Specs and Replacement
Type Designator: UPA2814T1S
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 43 nS
Cossⓘ - Output Capacitance: 1300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
Package: HWSON8
UPA2814T1S substitution
- MOSFET ⓘ Cross-Reference Search
UPA2814T1S datasheet
upa2814t1s.pdf
Data Sheet PA2814T1S R07DS0776EJ0101 P-channel MOSFET Rev.1.01 May 28, 2013 30 V, 24 A, 7.8 m Description The PA2814T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 7.8 m MAX. (VGS = -10 V, ID = -24... See More ⇒
upa2812t1l.pdf
Data Sheet PA2812T1L R07DS0762EJ0101 P-channel MOSFEF Rev.1.01 May 28, 2013 30 V, 30 A, 4.8 m Description The PA2812T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 4.8 m MAX. (VGS = -10 V, ID = -30... See More ⇒
upa2811t1l.pdf
Preliminary Data Sheet R07DS0191EJ0100 PA2811T1L Rev.1.00 Jan 11, 2011 MOS FIELD EFFECT TRANSISTOR Description The PA2811T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS -30 V (TA = 25 C) Low on-state resistance RDS(on) = 15 m MAX. (VGS = -10 V, ID = -19 A) ... See More ⇒
upa2810t1l.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
Detailed specifications: UPA2793GR, UPA2794AGR, UPA2794GR, UPA2805UT1L, UPA2810T1L, UPA2811T1L, UPA2812T1L, UPA2813T1L, K2611, UPA2815T1S, UPA2816T1S, UPA2820T1S, UPA2821T1L, UPA2822T1L, UPA2825T1S, UPA2826T1S, UPA3753GR
Keywords - UPA2814T1S MOSFET specs
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History: TSD5N60M
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