UPA2826T1S
MOSFET. Datasheet pdf. Equivalent
Type Designator: UPA2826T1S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.5
V
|Id|ⓘ - Maximum Drain Current: 27
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 37
nC
trⓘ - Rise Time: 94
nS
Cossⓘ -
Output Capacitance: 1230
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0043
Ohm
Package: HWSON8
UPA2826T1S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UPA2826T1S
Datasheet (PDF)
..1. Size:209K renesas
upa2826t1s.pdf 
Data SheetPA2826T1S N-channel MOSFET R07DS0989EJ0100Rev.1.0020 V , 27 A , 4.3 m Dec 25, 2012Description The PA2826T1S is N-channel MOS Field Effect Transistor designed for power management applications of portable equipment . Features VDSS = 20 V (TA = 25C) Low on-state resistance RDS(on) = 4.3 m MAX. (VGS = 8.0 V, ID = 13.5 A) 2.5 V Gate-d
8.1. Size:189K renesas
upa2820t1s.pdf
Preliminary Data Sheet PA2820T1S R07DS0751EJ0100Rev.1.00May 25, 2012MOS FIELD EFFECT TRANSISTOR Description The PA2820T1S is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. Features VDSS = 30 V (TA = 25C) Low on-state resistance RDS(on) = 5.3 m MAX. (VGS
8.2. Size:192K renesas
upa2825t1s.pdf
Preliminary Data Sheet PA2825T1S R07DS0755EJ0100Rev.1.00May 25, 2012MOS FIELD EFFECT TRANSISTOR Description The PA2825T1S is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. Features VDSS = 30 V (TA = 25C) Low on-state resistance RDS(on) = 4.6 m MAX. (VGS
8.3. Size:138K renesas
upa2822t1l.pdf
Data SheetPA2822T1L R07DS0754EJ0100Rev.1.00May 25, 2012MOS FIELD EFFECT TRANSISTOR Description The PA2822T1L is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. Features VDSS = 30 V (TA = 25C) Low on-state resistance RDS(on) = 2.6 m MAX. (VGS = 10 V, ID =
8.4. Size:143K renesas
upa2821t1l.pdf
PreliminaryData Sheet PA2821T1L R07DS0753EJ0100Rev.1.00May 25, 2012MOS FIELD EFFECT TRANSISTOR Description The PA2821T1L is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. Features VDSS = 30 V (TA = 25C) Low on-state resistance RDS(on) = 3.8 m MAX. (VGS
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