UPA2826T1S MOSFET Datasheet: N-Ch, 20V, 27A. Full specification with pinout and replacement list

UPA2826T1S Specs and Replacement

Type Designator: UPA2826T1S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 27 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 94 nS

Cossⓘ - Output Capacitance: 1230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm

Package: HWSON8

UPA2826T1S substitution

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UPA2826T1S datasheet

..1. Size:209K renesas
upa2826t1s.pdf pdf_icon

Data Sheet PA2826T1S N-channel MOSFET R07DS0989EJ0100 Rev.1.00 20 V , 27 A , 4.3 m Dec 25, 2012 Description The PA2826T1S is N-channel MOS Field Effect Transistor designed for power management applications of portable equipment . Features VDSS = 20 V (TA = 25 C) Low on-state resistance RDS(on) = 4.3 m MAX. (VGS = 8.0 V, ID = 13.5 A) 2.5 V Gate-d... See More ⇒

8.1. Size:189K renesas
upa2820t1s.pdf pdf_icon

Preliminary Data Sheet PA2820T1S R07DS0751EJ0100 Rev.1.00 May 25, 2012 MOS FIELD EFFECT TRANSISTOR Description The PA2820T1S is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. Features VDSS = 30 V (TA = 25 C) Low on-state resistance RDS(on) = 5.3 m MAX. (VGS... See More ⇒

8.2. Size:192K renesas
upa2825t1s.pdf pdf_icon

Preliminary Data Sheet PA2825T1S R07DS0755EJ0100 Rev.1.00 May 25, 2012 MOS FIELD EFFECT TRANSISTOR Description The PA2825T1S is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. Features VDSS = 30 V (TA = 25 C) Low on-state resistance RDS(on) = 4.6 m MAX. (VGS... See More ⇒

8.3. Size:138K renesas
upa2822t1l.pdf pdf_icon

Data Sheet PA2822T1L R07DS0754EJ0100 Rev.1.00 May 25, 2012 MOS FIELD EFFECT TRANSISTOR Description The PA2822T1L is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. Features VDSS = 30 V (TA = 25 C) Low on-state resistance RDS(on) = 2.6 m MAX. (VGS = 10 V, ID = ... See More ⇒