All MOSFET. UPA650TT Datasheet

 

UPA650TT MOSFET. Datasheet pdf. Equivalent


   Type Designator: UPA650TT
   Marking Code: WD
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.45 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.5 nC
   trⓘ - Rise Time: 200 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: 6-WSOF

 UPA650TT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UPA650TT Datasheet (PDF)

 ..1. Size:203K  renesas
upa650tt.pdf

UPA650TT
UPA650TT

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.1. Size:202K  renesas
upa651tt.pdf

UPA650TT
UPA650TT

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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