All MOSFET. UPA650TT Datasheet

 

UPA650TT Datasheet and Replacement


   Type Designator: UPA650TT
   Marking Code: WD
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.45 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 5.5 nC
   tr ⓘ - Rise Time: 200 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: 6-WSOF
 

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UPA650TT Datasheet (PDF)

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UPA650TT

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.1. Size:202K  renesas
 upa651tt.pdf pdf_icon

UPA650TT

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: UPA3753GR , UPA503CT , UPA572CT , UPA573CT , UPA602CT , UPA603CT , UPA621TT , UPA622TT , IRF540N , UPA651TT , US5U1 , US5U2 , US5U29TR , US5U3 , US5U30 , US5U35 , US5U38 .

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