All MOSFET. RFP3055 Datasheet

 

RFP3055 MOSFET. Datasheet pdf. Equivalent

Type Designator: RFP3055

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 53 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.15 Ohm

Package: TO220AB

RFP3055 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

RFP3055 Datasheet (PDF)

1.1. rfd3055le_rfd3055lesm_rfp3055le.pdf Size:414K _fairchild_semi

RFP3055
RFP3055

RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, Features N-Channel Power MOSFETs • 11A, 60V These N-Channel enhancement-mode power MOSFETs are • rDS(ON) = 0.107Ω manufactured using the latest manufacturing process • Temperature Compensating PSPICE® Model technology. This process, which uses feature sizes approaching those of LSI

1.2. rfd3055-sm_rfp3055.pdf Size:114K _harris_semi

RFP3055
RFP3055

RFD3055, RFD3055SM S E M I C O N D U C T O R RFP3055 12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs (MegaFETs) February 1994 Features Packaging JEDEC TO-220AB • 12A, 60V TOP VIEW • rDS(ON) = 0.150Ω SOURCE • Temperature Compensating PSPICE Model DRAIN • Peak Current vs Pulse Width Curve GATE • UIS Rating Curve • +175oC Operating Temperature JED

5.1. rfg30p06_rfp30p06_rf1s30p06sm.pdf Size:386K _fairchild_semi

RFP3055
RFP3055

RFG30P06, RFP30P06, RF1S30P06SM Data Sheet January 2002 30A, 60V, 0.065 Ohm, P-Channel Power Features MOSFETs • 30A, 60V These are P-Channel power MOSFETs manufactured using • rDS(ON) = 0.065Ω the MegaFET process. This process, which uses feature • Temperature Compensating PSPICE® Model sizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin

5.2. rfp30n06le_rf1s30n06lesm.pdf Size:188K _fairchild_semi

RFP3055

5.3. rfg30p05_rfp30p05_rf1s30p05sm.pdf Size:365K _fairchild_semi

RFP3055
RFP3055

RFG30P05, RFP30P05, RF1S30P05SM Data Sheet January 2002 30A, 50V, 0.065 Ohm, P-Channel Power Features MOSFETs • 30A, 50V These are P-Channel power MOSFETs manufactured • rDS(ON) = 0.065Ω using the MegaFET process. This process, which uses • Temperature Compensating PSPICE® Model feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin

Datasheet: RFP22N10 , RFP25N05 , RFP25N05L , RFP25N06 , RFP2N08L , RFP2N10L , RFP2N20 , RFP2N20L , IRF640N , RFP3055LE , RFP30N06LE , RFP30P05 , RFP30P06 , RFP40N10 , RFP40N10LE , RFP45N06 , RFP45N06LE .

 


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