US5U30 Datasheet. Specs and Replacement

Type Designator: US5U30

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.39 Ohm

Package: TUMT5

US5U30 substitution

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US5U30 datasheet

 ..1. Size:76K  rohm
 us5u30.pdf pdf_icon

US5U30

US5U30 Transistor 2.5V Drive Pch+SBD MOSFET US5U30 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TUMT5 Schottky Barrier DIODE 2.0 1.3 Features 1) The US5U30 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) Low on-state resistance with fast switching. 3) Low voltage drive(2.5V) 4) Built-in schottky barrier diode has low forward v... See More ⇒

 9.1. Size:101K  rohm
 us5u35.pdf pdf_icon

US5U30

US5U35 Transistor 4V Drive Pch+SBD MOSFET US5U35 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TUMT5 Schottky Barrier DIODE 2.0 Features 1.3 1) The US5U35 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) With fast switching. 3) Built-in schottky barrier diode has low forward voltage. Abbreviated symbol U35 Applications Swi... See More ⇒

 9.2. Size:106K  rohm
 us5u38.pdf pdf_icon

US5U30

US5U38 Transistor 2.5V Drive Pch+SBD MOSFET US5U38 Dimensions (Unit mm) Structure Silicon P-channel MOSFET TUMT5 Schottky Barrier DIODE 2.0 1.3 Features 1) The US5U38 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) Low on-resistance with fast switching. 3) Low voltage drive (2.5V). 4) Built-in schottky barrier diode has low forward volt... See More ⇒

 9.3. Size:65K  rohm
 us5u3.pdf pdf_icon

US5U30

US5U3 Transistors 2.5V Drive Nch+SBD MOSFET US5U3 Structure Dimensions (Unit mm) Silicon N-channel MOSFET / TUMT5 Schottky barrier diode 2.0 1.3 Features 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. Abbreviated symbol ... See More ⇒

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Detailed specifications: UPA621TT, UPA622TT, UPA650TT, UPA651TT, US5U1, US5U2, US5U29TR, US5U3, IRLZ44N, US5U35, US5U38, US6J11, US6K1, US6K2, US6K4, US6M1, US6M11

Keywords - US5U30 MOSFET specs

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