US5U30
MOSFET. Datasheet pdf. Equivalent
Type Designator: US5U30
Marking Code: U30
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 2.1
nC
trⓘ - Rise Time: 8
nS
Cossⓘ -
Output Capacitance: 20
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.39
Ohm
Package: TUMT5
US5U30
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
US5U30
Datasheet (PDF)
..1. Size:76K rohm
us5u30.pdf
US5U30 Transistor 2.5V Drive Pch+SBD MOSFET US5U30 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TUMT5Schottky Barrier DIODE 2.01.3 Features 1) The US5U30 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) Low on-state resistance with fast switching. 3) Low voltage drive(2.5V) 4) Built-in schottky barrier diode has low forward v
9.1. Size:101K rohm
us5u35.pdf
US5U35 Transistor 4V Drive Pch+SBD MOSFET US5U35 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TUMT5Schottky Barrier DIODE 2.0 Features 1.31) The US5U35 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) With fast switching. 3) Built-in schottky barrier diode has low forward voltage. Abbreviated symbol : U35 Applications Swi
9.2. Size:106K rohm
us5u38.pdf
US5U38 Transistor 2.5V Drive Pch+SBD MOSFET US5U38 Dimensions (Unit : mm) Structure Silicon P-channel MOSFET TUMT5Schottky Barrier DIODE 2.01.3 Features 1) The US5U38 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) Low on-resistance with fast switching. 3) Low voltage drive (2.5V). 4) Built-in schottky barrier diode has low forward volt
9.3. Size:65K rohm
us5u3.pdf
US5U3 Transistors 2.5V Drive Nch+SBD MOSFET US5U3 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET / TUMT5Schottky barrier diode 2.01.3 Features 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. Abbreviated symbol
Datasheet: WPB4002
, FDM15-06KC5
, FQD2N60CTM
, FDM47-06KC5
, FDPF045N10A
, FMD15-06KC5
, FDMS8672S
, FMD21-05QC
, IRFP250N
, FDMS86368F085
, FMD47-06KC5
, FDBL86361F085
, FMK75-01F
, FMM110-015X2F
, FMM150-0075X2F
, FMM22-05PF
, FMM22-06PF
.