SSM60T03H Datasheet and Replacement
Type Designator: SSM60T03H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 45 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 57.5 nS
Cossⓘ - Output Capacitance: 200 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO252
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SSM60T03H Datasheet (PDF)
ssm60t03gh ssm60t03gj.pdf

SSM60T03GH,JN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM60T03 acheives fast switching performanceBVDSS 30Vwith low gate charge without a complex drive circuit. It isRDS(ON) 12msuitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 45AD The SSM60T03GH is in a TO-252 package, which isPb-free; RoHS
ssm60t03gp ssm60t03gs.pdf

SSM60T03GP,SN-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS 30VDSimple drive requirement RDS(ON) 12mFast switching ID 45AGPb-free, RoHS compliant.SDESCRIPTIONGThe SSM60T03GS is in a TO-263 package, which is widely used forDScommercial and industrial surface-mount applications. This device is TO-263 (S)suitable for low-voltage applications such as DC
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: IPB22N03S4L-15 | 2SK3700 | LSC65R280HT
Keywords - SSM60T03H MOSFET datasheet
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History: IPB22N03S4L-15 | 2SK3700 | LSC65R280HT



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