SSM60T03H Datasheet and Replacement
Type Designator: SSM60T03H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 57.5 nS
Cossⓘ - Output Capacitance: 200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO252
SSM60T03H substitution
SSM60T03H Datasheet (PDF)
ssm60t03gh ssm60t03gj.pdf

SSM60T03GH,JN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM60T03 acheives fast switching performanceBVDSS 30Vwith low gate charge without a complex drive circuit. It isRDS(ON) 12msuitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 45AD The SSM60T03GH is in a TO-252 package, which isPb-free; RoHS
ssm60t03gp ssm60t03gs.pdf

SSM60T03GP,SN-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS 30VDSimple drive requirement RDS(ON) 12mFast switching ID 45AGPb-free, RoHS compliant.SDESCRIPTIONGThe SSM60T03GS is in a TO-263 package, which is widely used forDScommercial and industrial surface-mount applications. This device is TO-263 (S)suitable for low-voltage applications such as DC
Datasheet: APM3009NF , APM3009NG , APM3009NU , APM3023NU , APM3023NV , APM3023NF , SI4834BDY , SI4856DY , IRF1010E , SSM60T03J , EC4406C , EC4407KF , ECH8302 , ECH8304 , ECH8305 , ECH8306 , ECH8402 .
History: OSG70R1K4FF | IXTA4N150HV | SLD60R380S2
Keywords - SSM60T03H MOSFET datasheet
SSM60T03H cross reference
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SSM60T03H replacement
History: OSG70R1K4FF | IXTA4N150HV | SLD60R380S2



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