ECH8693R MOSFET. Datasheet pdf. Equivalent

   Type Designator: ECH8693R
   Marking Code: UQ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12.5 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.5 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13 nC
   trⓘ - Rise Time: 525 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: ECH8

ECH8693R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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