EFC6602R MOSFET. Datasheet pdf. Equivalent

   Type Designator: EFC6602R
   Marking Code: MB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.5 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 55 nC
   trⓘ - Rise Time: 2100 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm
   Package: EFCP2718

EFC6602R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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