ELM13402CA
MOSFET. Datasheet pdf. Equivalent
Type Designator: ELM13402CA
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 4.34
nC
trⓘ - Rise Time: 1
nS
Cossⓘ -
Output Capacitance: 54.5
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055
Ohm
Package:
SOT-23
ELM13402CA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ELM13402CA
Datasheet (PDF)
..1. Size:405K elm
elm13402ca.pdf 
Single N-channel MOSFETELM13402CA-SGeneral description Features ELM13402CA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=4A (Vgs=10V)resistance. Rds(on)
7.1. Size:782K elm
elm13400ca-s.pdf
Single N-channel MOSFETELM13400CA-SGeneral description Features ELM13400CA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=5.8A (Vgs=10V)resistance. Rds(on)
7.2. Size:220K elm
elm13403ca.pdf
Single P-channel MOSFETELM13403CA-SGeneral description Features ELM13403CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-2.6A (Vgs=-10V)resistance. Rds(on)
7.3. Size:781K elm
elm13407ca-s.pdf
Single P-channel MOSFETELM13407CA-SGeneral description Features ELM13407CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-4.1A (Vgs=-10V)resistance. Rds(on)
7.4. Size:385K elm
elm13409ca.pdf
Single P-channel MOSFETELM13409CA-SGeneral description Features ELM13409CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-2.6A (Vgs=-10V)resistance. Rds(on)
7.5. Size:373K elm
elm13401ca.pdf
Single P-channel MOSFETELM13401CA-SGeneral description Features ELM13401CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-4.2A (Vgs=-10V)resistance. Rds(on)
7.6. Size:406K elm
elm13406ca.pdf
Single N-channel MOSFETELM13406CA-SGeneral description Features ELM13406CA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=3.6A (Vgs=10V)resistance. Rds(on)
7.7. Size:391K elm
elm13404ca.pdf
Single N-channel MOSFETELM13404CA-SGeneral description Features ELM13404CA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=5.8A (Vgs=10V)resistance. Rds(on)
Datasheet: IRFP360LC
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