ELM13421CA Datasheet and Replacement
Type Designator: ELM13421CA
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pd ⓘ
- Maximum Power Dissipation: 1.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 2.6
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 3.2
nS
Cossⓘ -
Output Capacitance: 50.3
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13
Ohm
Package:
SOT-23
-
MOSFET ⓘ Cross-Reference Search
ELM13421CA Datasheet (PDF)
..1. Size:385K elm
elm13421ca.pdf 
Single P-channel MOSFETELM13421CA-SGeneral description Features ELM13421CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-2.6A (Vgs=-10V)resistance. Rds(on)
7.1. Size:586K elm
elm13424ca.pdf 
Single N-channel MOSFETELM13424CA-SGeneral description Features ELM13424CA-S uses advanced trench technology Vds=30Vto provide excellent Rds(on), low gate charge and Id=3.8A (Vgs=10V)operation with gate voltages as low as 2.5V. Rds(on)
8.1. Size:385K elm
elm13414ca.pdf 
Single N-channel MOSFETELM13414CA-SGeneral description Features ELM13414CA-S uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=4.2A (Vgs=4.5V)operation with gate voltages as low as 1.8V. Rds(on)
8.2. Size:785K elm
elm13419ca.pdf 
P MOSFETELM13419CA-S ELM13419CA-S P Vds=-20V MOSFET Id=-3.5A (Vgs=-10V) ESD Rds(on)
8.3. Size:652K elm
elm13416ca.pdf 
Single N-channel MOSFETELM13416CA-SGeneral description Features ELM13416CA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and operation Id=6.5A (Vgs=4.5V)with gate voltages as low as 1.8V and internal ESD Rds(on)
8.4. Size:385K elm
elm13413ca.pdf 
Single P-channel MOSFETELM13413CA-SGeneral description Features ELM13413CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-3A (Vgs=-4.5V)resistance. Rds(on)
8.5. Size:492K elm
elm13434ca.pdf 
Single N-channel MOSFETELM13434CA-SGeneral description Features The ELM13434CA-S uses advanced trench technology to Vds=30Vprovide excellent RDS(ON) and low gate charge. This Id=4.2A (Vgs=10V)device is suitable for use as a load switch or in PWM Rds(on)
8.6. Size:782K elm
elm13400ca-s.pdf 
Single N-channel MOSFETELM13400CA-SGeneral description Features ELM13400CA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=5.8A (Vgs=10V)resistance. Rds(on)
8.7. Size:388K elm
elm13418ca.pdf 
Single N-channel MOSFETELM13418CA-SGeneral description Features ELM13418CA-S uses advanced trench technology Vds=30Vto provide excellent Rds(on), low gate charge and Id=3.8A (Vgs=10V)operation with gate voltages as low as 2.5V. Rds(on)
8.8. Size:220K elm
elm13403ca.pdf 
Single P-channel MOSFETELM13403CA-SGeneral description Features ELM13403CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-2.6A (Vgs=-10V)resistance. Rds(on)
8.9. Size:781K elm
elm13407ca-s.pdf 
Single P-channel MOSFETELM13407CA-SGeneral description Features ELM13407CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-4.1A (Vgs=-10V)resistance. Rds(on)
8.10. Size:385K elm
elm13409ca.pdf 
Single P-channel MOSFETELM13409CA-SGeneral description Features ELM13409CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-2.6A (Vgs=-10V)resistance. Rds(on)
8.11. Size:373K elm
elm13401ca.pdf 
Single P-channel MOSFETELM13401CA-SGeneral description Features ELM13401CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-4.2A (Vgs=-10V)resistance. Rds(on)
8.12. Size:405K elm
elm13402ca.pdf 
Single N-channel MOSFETELM13402CA-SGeneral description Features ELM13402CA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=4A (Vgs=10V)resistance. Rds(on)
8.13. Size:406K elm
elm13406ca.pdf 
Single N-channel MOSFETELM13406CA-SGeneral description Features ELM13406CA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=3.6A (Vgs=10V)resistance. Rds(on)
8.14. Size:718K elm
elm13415ca.pdf 
Single P-channel MOSFETELM13415CA-SGeneral description Features ELM13415CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-4A (Vgs=-4.5V)resistance. Internal ESD protection is included. Rds(on)
8.15. Size:391K elm
elm13404ca.pdf 
Single N-channel MOSFETELM13404CA-SGeneral description Features ELM13404CA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=5.8A (Vgs=10V)resistance. Rds(on)
Datasheet: ELM13407CA-S
, ELM13409CA
, ELM13413CA
, ELM13414CA
, ELM13415CA
, ELM13416CA
, ELM13418CA
, ELM13419CA
, 8N60
, ELM13424CA
, ELM13434CA
, ELM14354AA
, ELM14404AA
, ELM14405AA
, ELM14406AA
, ELM14407AA
, ELM14408AA
.
History: FQD6N50CTM
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