RFP4N05L MOSFET PDF: N-Ch, 50V, 4A. Full specification with pinout and replacement list

RFP4N05L PDF Specs

..1. Size:255K njs
rfl2n05l rfl2n06l rfp4n05l rfp4n06l.pdf pdf_icon

..2. Size:40K intersil
rfp4n05l rfp4n06l.pdf pdf_icon

RFP4N05L, RFP4N06L Data Sheet July 1999 File Number 2876.2 4A, 50V and 60V, 0.800 Ohm, Logic Level, Features N-Channel Power MOSFETs 4A, 50V and 60V The RFP4N05L and RFP4N06L are N-Channel enhancement rDS(ON) = 0.800 mode silicon gate power field effect transistors designed for Design Optimized for 5V Gate Drives applications such as switching regulators, switching conv... See More ⇒

9.1. Size:93K fairchild semi
rfp4n100 rf1s4n100sm.pdf pdf_icon

RFP4N100, RF1S4N100SM Data Sheet January 2002 4.3A, 1000V, 3.500 Ohm, High Voltage, Features N-Channel Power MOSFETs 4.3A, 1000V The RFP4N100 and RFP4N100SM are N-Channel rDS(ON) = 3.500 enhancement mode silicon gate power field effect UIS Rating Curve (Single Pulse) transistors. They are designed for use in applications such as switching regulators, switching conver... See More ⇒

9.2. Size:42K harris semi
rfm4n35 rfm4n40 rfp4n35 rfp4n40.pdf pdf_icon

RFM4N35, RFM4N40, RFP4N35, RFP4N40 Semiconductor Data Sheet October 1998 File Number 1491.3 4A, 350V and 400V, 2.000 Ohm, N-Channel Features Power MOSFETs 4A, 350V and 400V [ /Title [ /Title These are N-channel enhancement-mode silicon-gate rDS(ON) = 2.000 (RFM4N () power field effect transistors designed for applications such 35, Related Literature /Sub- as switchi... See More ⇒

Detailed specifications: RFP3055LE , RFP30N06LE , RFP30P05 , RFP30P06 , RFP40N10 , RFP40N10LE , RFP45N06 , RFP45N06LE , IRF520 , RFP4N06L , RFP4N100 , RFP50N05L , RFP50N06 , RFP50N06LE , RFP60P03 , RFP70N03 , RFP70N06 .