ELM14430AA MOSFET. Datasheet pdf. Equivalent

   Type Designator: ELM14430AA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 103 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 638 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: SOP-8

ELM14430AA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

ELM14430AA Datasheet (PDF)

..1. Size:458K elm
elm14430aa.pdf

Single N-channel MOSFETELM14430AA-NGeneral description Features ELM14430AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=18A (Vgs=10V)resistance. Rds(on)

8.1. Size:414K elm
elm14409aa.pdf

Single P-channel MOSFETELM14409AA-NGeneral description Features ELM14409AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-15A (Vgs=-10V)resistance. Rds(on)

8.2. Size:394K elm
elm14427aa.pdf

Single P-channel MOSFETELM14427AA-NGeneral description Features ELM14427AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-12.5A (Vgs=-20V)resistance. Internal ESD protection is included. Rds(on)

8.3. Size:410K elm
elm14411aa.pdf

Single P-channel MOSFETELM14411AA-NGeneral description Features ELM14411AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-8A (Vgs=-10V)resistance. Rds(on)

8.4. Size:394K elm
elm14419aa.pdf

Single P-channel MOSFETELM14419AA-NGeneral description Features ELM14419AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-9.7A (Vgs=-10V)resistance. Rds(on)

8.5. Size:401K elm
elm14468aa.pdf

Single N-channel MOSFETELM14468AA-NGeneral description Features ELM14468AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=11.6A (Vgs=10V)resistance. Rds(on)

8.6. Size:389K elm
elm14425aa.pdf

Single P-channel MOSFETELM14425AA-NGeneral description Features ELM14425AA-N uses advanced trench technology to Vds=-38Vprovide excellent Rds(on), low gate charge and low gate Id=-14A (Vgs=-20V)resistance. Internal ESD protection is included. Rds(on)

8.7. Size:428K elm
elm14408aa.pdf

Single N-channel MOSFETELM14408AA-NGeneral description Features ELM14408AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=12A (Vgs=10V)resistance. Rds(on)

8.8. Size:399K elm
elm14466aa.pdf

Single N-channel MOSFETELM14466AA-NGeneral description Features ELM14466AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=9.4A (Vgs=10V)resistance. Rds(on)

8.9. Size:390K elm
elm14420aa.pdf

Single N-channel MOSFETELM14420AA-NGeneral description Features ELM14420AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=13.7A (Vgs=10V)resistance. Rds(on)

8.10. Size:409K elm
elm14407aa.pdf

Single P-channel MOSFETELM14407AA-NGeneral description Features ELM14407AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-12A (Vgs=-20V)resistance. Rds(on)

8.11. Size:415K elm
elm14406aa.pdf

Single N-channel MOSFETELM14406AA-NGeneral description Features ELM14406AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=11.5A (Vgs=10V)resistance. Rds(on)

8.12. Size:382K elm
elm14440aa.pdf

Single N-channel MOSFETELM14440AA-NGeneral description Features ELM14440AA-N uses advanced trench technology to Vds=60Vprovide excellent Rds(on), low gate charge and low gate Id=5A (Vgs=10V)resistance. Rds(on)

8.13. Size:434K elm
elm14418aa.pdf

Single N-channel MOSFETELM14418AA-NGeneral description Features ELM14418AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=11.5A (Vgs=20V)resistance. Rds(on)

8.14. Size:394K elm
elm14405aa.pdf

Single P-channel MOSFETELM14405AA-NGeneral description Features ELM14405AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-6A (Vgs=-10V)resistance. Rds(on)

8.15. Size:402K elm
elm14404aa.pdf

Single N-channel MOSFETELM14404AA-NGeneral description Features ELM14404AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=8.5A (Vgs=10V)resistance. Rds(on)

8.16. Size:390K elm
elm14423aa.pdf

Single P-channel MOSFETELM14423AA-NGeneral description Features ELM14423AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-15A (Vgs=-20V)resistance. Internal ESD protection is included. Rds(on)

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , SKD502T , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

LIST

Last Update

All MOSFET. ELM14430AA Datasheet

ELM14430AA MOSFET. Datasheet pdf. Equivalent

ELM14430AA Datasheet (PDF)

LIST

Last Update

AllTransistors(C)2015