ELM14440AA
MOSFET. Datasheet pdf. Equivalent
Type Designator: ELM14440AA
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 8.5
nC
trⓘ - Rise Time: 2.6
nS
Cossⓘ -
Output Capacitance: 60
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055
Ohm
Package:
SOP-8
ELM14440AA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ELM14440AA
Datasheet (PDF)
..1. Size:382K elm
elm14440aa.pdf 
Single N-channel MOSFETELM14440AA-NGeneral description Features ELM14440AA-N uses advanced trench technology to Vds=60Vprovide excellent Rds(on), low gate charge and low gate Id=5A (Vgs=10V)resistance. Rds(on)
8.1. Size:414K elm
elm14409aa.pdf
Single P-channel MOSFETELM14409AA-NGeneral description Features ELM14409AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-15A (Vgs=-10V)resistance. Rds(on)
8.2. Size:458K elm
elm14430aa.pdf
Single N-channel MOSFETELM14430AA-NGeneral description Features ELM14430AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=18A (Vgs=10V)resistance. Rds(on)
8.3. Size:394K elm
elm14427aa.pdf
Single P-channel MOSFETELM14427AA-NGeneral description Features ELM14427AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-12.5A (Vgs=-20V)resistance. Internal ESD protection is included. Rds(on)
8.4. Size:410K elm
elm14411aa.pdf
Single P-channel MOSFETELM14411AA-NGeneral description Features ELM14411AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-8A (Vgs=-10V)resistance. Rds(on)
8.5. Size:394K elm
elm14419aa.pdf
Single P-channel MOSFETELM14419AA-NGeneral description Features ELM14419AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-9.7A (Vgs=-10V)resistance. Rds(on)
8.6. Size:401K elm
elm14468aa.pdf
Single N-channel MOSFETELM14468AA-NGeneral description Features ELM14468AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=11.6A (Vgs=10V)resistance. Rds(on)
8.7. Size:389K elm
elm14425aa.pdf
Single P-channel MOSFETELM14425AA-NGeneral description Features ELM14425AA-N uses advanced trench technology to Vds=-38Vprovide excellent Rds(on), low gate charge and low gate Id=-14A (Vgs=-20V)resistance. Internal ESD protection is included. Rds(on)
8.8. Size:428K elm
elm14408aa.pdf
Single N-channel MOSFETELM14408AA-NGeneral description Features ELM14408AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=12A (Vgs=10V)resistance. Rds(on)
8.9. Size:399K elm
elm14466aa.pdf
Single N-channel MOSFETELM14466AA-NGeneral description Features ELM14466AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=9.4A (Vgs=10V)resistance. Rds(on)
8.10. Size:390K elm
elm14420aa.pdf
Single N-channel MOSFETELM14420AA-NGeneral description Features ELM14420AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=13.7A (Vgs=10V)resistance. Rds(on)
8.11. Size:409K elm
elm14407aa.pdf
Single P-channel MOSFETELM14407AA-NGeneral description Features ELM14407AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-12A (Vgs=-20V)resistance. Rds(on)
8.12. Size:415K elm
elm14406aa.pdf
Single N-channel MOSFETELM14406AA-NGeneral description Features ELM14406AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=11.5A (Vgs=10V)resistance. Rds(on)
8.13. Size:434K elm
elm14418aa.pdf
Single N-channel MOSFETELM14418AA-NGeneral description Features ELM14418AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=11.5A (Vgs=20V)resistance. Rds(on)
8.14. Size:394K elm
elm14405aa.pdf
Single P-channel MOSFETELM14405AA-NGeneral description Features ELM14405AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-6A (Vgs=-10V)resistance. Rds(on)
8.15. Size:402K elm
elm14404aa.pdf
Single N-channel MOSFETELM14404AA-NGeneral description Features ELM14404AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=8.5A (Vgs=10V)resistance. Rds(on)
8.16. Size:390K elm
elm14423aa.pdf
Single P-channel MOSFETELM14423AA-NGeneral description Features ELM14423AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-15A (Vgs=-20V)resistance. Internal ESD protection is included. Rds(on)
Datasheet: FMM50-025TF
, FMM60-02TF
, FMM75-01F
, FMP26-02P
, FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, RFP50N06
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, GMM3x180-004X2-SMD
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
.
