ELM14806AA MOSFET Datasheet: N-Ch, 20V, 9.4A. Full specification with pinout and replacement list

ELM14806AA Specs and Replacement

Type Designator: ELM14806AA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 9.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.9 nS

Cossⓘ - Output Capacitance: 232 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: SOP-8

ELM14806AA substitution

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ELM14806AA datasheet

..1. Size:395K elm
elm14806aa.pdf pdf_icon

Dual N-channel MOSFET ELM14806AA-N General description Features ELM14806AA-N uses advanced trench technology Vds=20V to provide excellent Rds(on), low gate charge and Id=9.4A (Vgs=10V) operation with gate voltages as low as 1.8V and internal Rds(on) ... See More ⇒

7.1. Size:389K elm
elm14801aa.pdf pdf_icon

Dual P-channel MOSFET ELM14801AA-N General description Features ELM14801AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on) and low gate charge. Id=-5A (Vgs=-10V) Rds(on) ... See More ⇒

7.2. Size:410K elm
elm14805aa.pdf pdf_icon

Dual P-channel MOSFET ELM14805AA-N General description Features ELM14805AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on) and low gate charge. Id=-8A (Vgs=-20V) Rds(on) ... See More ⇒

7.3. Size:1111K elm
elm14803ab.pdf pdf_icon

Dual P-channel MOSFET ELM14803AB-N General description Features ELM14803AB-N uses advanced trench technology to Vds=-30V provide excellent Rds(on) and low gate charge. Id=-5A (Vgs=-10V) Rds(on) ... See More ⇒