All MOSFET. ELM14822AA Datasheet

 

ELM14822AA MOSFET. Datasheet pdf. Equivalent


   Type Designator: ELM14822AA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 8.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19.2 nC
   trⓘ - Rise Time: 4.4 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: SOP-8

 ELM14822AA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ELM14822AA Datasheet (PDF)

 ..1. Size:389K  elm
 elm14822aa.pdf

ELM14822AA ELM14822AA

Dual N-channel MOSFETELM14822AA-NGeneral description Features ELM14822AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on) and low gate charge. Id=8.5A (Vgs=10V) Rds(on)

 7.1. Size:401K  elm
 elm14828aa.pdf

ELM14822AA ELM14822AA

Dual N-channel MOSFETELM14828AA-NGeneral description Features ELM14828AA-N uses advanced trench technology to Vds=60Vprovide excellent Rds(on) and low gate charge. Id=4.5A (Vgs=10V) Rds(on)

 7.2. Size:388K  elm
 elm14826aa.pdf

ELM14822AA ELM14822AA

Dual N-channel MOSFETELM14826AA-NGeneral description Features ELM14826AA-N uses advanced trench technology to Vds=60Vprovide excellent Rds(on) and low gate charge. Id=6.3A (Vgs=10V) Rds(on)

 8.1. Size:395K  elm
 elm14806aa.pdf

ELM14822AA ELM14822AA

Dual N-channel MOSFETELM14806AA-NGeneral description Features ELM14806AA-N uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=9.4A (Vgs=10V)operation with gate voltages as low as 1.8V and internal Rds(on)

 8.2. Size:389K  elm
 elm14801aa.pdf

ELM14822AA ELM14822AA

Dual P-channel MOSFETELM14801AA-NGeneral description Features ELM14801AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on) and low gate charge. Id=-5A (Vgs=-10V) Rds(on)

 8.3. Size:410K  elm
 elm14805aa.pdf

ELM14822AA ELM14822AA

Dual P-channel MOSFETELM14805AA-NGeneral description Features ELM14805AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on) and low gate charge. Id=-8A (Vgs=-20V) Rds(on)

 8.4. Size:1111K  elm
 elm14803ab.pdf

ELM14822AA ELM14822AA

Dual P-channel MOSFETELM14803AB-NGeneral description Features ELM14803AB-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on) and low gate charge. Id=-5A (Vgs=-10V) Rds(on)

 8.5. Size:392K  elm
 elm14812aa.pdf

ELM14822AA ELM14822AA

Dual N-channel MOSFETELM14812AA-NGeneral description Features ELM14812AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on) and low gate charge. Id=6.9A (Vgs=10V) Rds(on)

 8.6. Size:392K  elm
 elm14800aa.pdf

ELM14822AA ELM14822AA

Dual N-channel MOSFETELM14800AA-NGeneral description Features ELM14800AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on) and low gate charge. Id=6.9A (Vgs=10V) Rds(on)

 8.7. Size:890K  cn vbsemi
 elm14800aa.pdf

ELM14822AA ELM14822AA

ELM14800AAwww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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