All MOSFET. ELM14822AA Datasheet

 

ELM14822AA Datasheet and Replacement


   Type Designator: ELM14822AA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.4 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: SOP-8
 

 ELM14822AA substitution

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ELM14822AA Datasheet (PDF)

 ..1. Size:389K  elm
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ELM14822AA

Dual N-channel MOSFETELM14822AA-NGeneral description Features ELM14822AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on) and low gate charge. Id=8.5A (Vgs=10V) Rds(on)

 7.1. Size:401K  elm
elm14828aa.pdf pdf_icon

ELM14822AA

Dual N-channel MOSFETELM14828AA-NGeneral description Features ELM14828AA-N uses advanced trench technology to Vds=60Vprovide excellent Rds(on) and low gate charge. Id=4.5A (Vgs=10V) Rds(on)

 7.2. Size:388K  elm
elm14826aa.pdf pdf_icon

ELM14822AA

Dual N-channel MOSFETELM14826AA-NGeneral description Features ELM14826AA-N uses advanced trench technology to Vds=60Vprovide excellent Rds(on) and low gate charge. Id=6.3A (Vgs=10V) Rds(on)

 8.1. Size:395K  elm
elm14806aa.pdf pdf_icon

ELM14822AA

Dual N-channel MOSFETELM14806AA-NGeneral description Features ELM14806AA-N uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=9.4A (Vgs=10V)operation with gate voltages as low as 1.8V and internal Rds(on)

Datasheet: ELM14614AA , ELM14702AA-N , ELM14800AA , ELM14801AA , ELM14803AB , ELM14805AA , ELM14806AA , ELM14812AA , IRFB4227 , ELM14826AA , ELM14828AA , ELM16400EA , ELM16401EA , ELM16402EA , ELM16403EA , ELM16405EA , ELM16408EA .

History: IXFT96N20P | APT20F50S | CEM4282 | ME7632S-G | SVS65R280DD4TR | AP50WN520I | AUIRFR5410TR

Keywords - ELM14822AA MOSFET datasheet

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