ELM16401EA
MOSFET. Datasheet pdf. Equivalent
Type Designator: ELM16401EA
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3
V
|Id|ⓘ - Maximum Drain Current: 5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 9.5
nC
trⓘ - Rise Time: 3
nS
Cossⓘ -
Output Capacitance: 108
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.049
Ohm
Package:
SOT-26
ELM16401EA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ELM16401EA
Datasheet (PDF)
..1. Size:388K elm
elm16401ea.pdf 
Single P-channel MOSFETELM16401EA-SGeneral description Features ELM16401EA-S uses advanced trench technology Vds=-30Vto provide excellent Rds(on), low gate charge and Id=-5A (Vgs=-10V)operation with gate voltages as low as 2.5V. Rds(on)
7.1. Size:413K elm
elm16405ea.pdf
Single P-channel MOSFETELM16405EA-SGeneral description Features ELM16405EA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-5A (Vgs=-10V)resistance. Rds(on)
7.2. Size:438K elm
elm16408ea.pdf
Single N-channel MOSFETELM16408EA-SGeneral description Features ELM16408EA-S uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=8.8A (Vgs=10V)operation with gate voltages as low as 1.8V and internal Rds(on)
7.3. Size:389K elm
elm16402ea.pdf
Single N-channel MOSFETELM16402EA-SGeneral description Features ELM16402EA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=6.9A (Vgs=10V)resistance. Rds(on)
7.4. Size:388K elm
elm16409ea.pdf
Single P-channel MOSFETELM16409EA-SGeneral description Features ELM16409EA-S uses advanced trench technology Vds=-20Vto provide excellent Rds(on), low gate charge and Id=-5A (Vgs=-4.5V)operation with gate voltages as low as 1.8V and internal Rds(on)
7.5. Size:386K elm
elm16403ea.pdf
Single P-channel MOSFETELM16403EA-SGeneral description Features ELM16403EA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-6A (Vgs=-10V)resistance. Rds(on)
7.6. Size:410K elm
elm16400ea.pdf
Single N-channel MOSFETELM16400EA-SGeneral description Features ELM16400EA-S uses advanced trench technology Vds=30Vto provide excellent Rds(on), low gate charge and Id=6.9A (Vgs=10V)operation with gate voltages as low as 2.5V. Rds(on)
Datasheet: FQT7N10L
, FDP083N15A
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