ELM16408EA MOSFET Datasheet: N-Ch, 20V, 8.8A. Full specification with pinout and replacement list

ELM16408EA Specs and Replacement

Type Designator: ELM16408EA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 8.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.9 nS

Cossⓘ - Output Capacitance: 232 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: SOT-26

ELM16408EA substitution

- MOSFET ⓘ Cross-Reference Search

ELM16408EA datasheet

..1. Size:438K elm
elm16408ea.pdf pdf_icon

Single N-channel MOSFET ELM16408EA-S General description Features ELM16408EA-S uses advanced trench technology Vds=20V to provide excellent Rds(on), low gate charge and Id=8.8A (Vgs=10V) operation with gate voltages as low as 1.8V and internal Rds(on) ... See More ⇒

7.1. Size:413K elm
elm16405ea.pdf pdf_icon

Single P-channel MOSFET ELM16405EA-S General description Features ELM16405EA-S uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-5A (Vgs=-10V) resistance. Rds(on) ... See More ⇒

7.2. Size:388K elm
elm16401ea.pdf pdf_icon

Single P-channel MOSFET ELM16401EA-S General description Features ELM16401EA-S uses advanced trench technology Vds=-30V to provide excellent Rds(on), low gate charge and Id=-5A (Vgs=-10V) operation with gate voltages as low as 2.5V. Rds(on) ... See More ⇒

7.3. Size:389K elm
elm16402ea.pdf pdf_icon

Single N-channel MOSFET ELM16402EA-S General description Features ELM16402EA-S uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=6.9A (Vgs=10V) resistance. Rds(on) ... See More ⇒