ELM17400FA
MOSFET. Datasheet pdf. Equivalent
Type Designator: ELM17400FA
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4
V
|Id|ⓘ - Maximum Drain Current: 1.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 4.82
nC
trⓘ - Rise Time: 2.3
nS
Cossⓘ -
Output Capacitance: 54.5
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085
Ohm
Package:
SC-70
ELM17400FA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ELM17400FA
Datasheet (PDF)
..1. Size:406K elm
elm17400fa.pdf 
Single N-channel MOSFETELM17400FA-SGeneral description Features ELM17400FA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and operation Id=1.7A (Vgs=10V)with gate voltages as low as 2.5V. Rds(on)
7.1. Size:386K elm
elm17401fa.pdf
Single P-channel MOSFETELM17401FA-SGeneral description Features ELM17401FA-S uses advanced trench technology Vds=-30Vto provide excellent Rds(on), low gate charge and Id=-1.2A (Vgs=-10V)operation with gate voltages as low as 2.5V. Rds(on)
7.2. Size:410K elm
elm17408ga.pdf
Single N-channel MOSFETELM17408GA-SGeneral description Features ELM17408GA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and operation Id=2.2A (Vgs=4.5V)with gate voltages as low as 1.8V. Rds(on)
8.1. Size:376K elm
elm17412ga.pdf
Single N-channel MOSFETELM17412GA-SGeneral description Features ELM17412GA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and operation Id=2.1A (Vgs=10V)with gate voltages as low as 2.5V. Rds(on)
Datasheet: FMM50-025TF
, FMM60-02TF
, FMM75-01F
, FMP26-02P
, FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, RFP50N06
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, GMM3x180-004X2-SMD
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
.
