ELM18822BA Specs and Replacement
Type Designator: ELM18822BA
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11.5 nS
Cossⓘ - Output Capacitance: 164 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: TSSOP-8
ELM18822BA substitution
- MOSFET ⓘ Cross-Reference Search
ELM18822BA datasheet
elm18822ba.pdf
(common drain) Dual N-channel MOSFET ELM18822BA-S General description Features ELM18822BA-S uses advanced trench technology to Vds=20V provide excellent Rds(on) and low gate charge. Id=7A (Vgs=10V) Rds(on) ... See More ⇒
elm18814ba.pdf
(common drain) Dual N-channel MOSFET ELM18814BA-S General description Features ELM18814BA-S uses advanced trench technology Vds=20V to provide excellent Rds(on), low gate charge and Id=7.5A (Vgs=10V) operation with gate voltages as low as 1.8V and internal Rds(on) ... See More ⇒
elm18801ba.pdf
Dual P-channel MOSFET ELM18801BA-S General description Features ELM18801BA-S uses advanced trench technology to Vds=-20V provide excellent Rds(on) and low gate charge. Internal Id=-4.7A (Vgs=-4.5V) ESD protection is included. Rds(on) ... See More ⇒
elm18806ba.pdf
(common drain) Dual N-channel MOSFET ELM18806BA-S General description Features ELM18806BA-S uses advanced trench technology Vds=20V to provide excellent Rds(on), low gate charge and Id=7A (Vgs=4.5V) operation with gate voltages as low as 1.8V and internal Rds(on) ... See More ⇒
Detailed specifications: ELM17408GA, ELM17412GA, ELM17600GA, ELM17800GA, ELM18801BA, ELM18806BA, ELM18810BA, ELM18814BA, K4145, ELM24603HA, ELM24604HA, ELM321504A, ELM321604A, ELM322806A, ELM323506A, ELM32400LA, ELM32401LA-S
Keywords - ELM18822BA MOSFET specs
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History: SPP08N50C3
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