ELM18822BA Datasheet and Replacement
Type Designator: ELM18822BA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11.5 nS
Cossⓘ - Output Capacitance: 164 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: TSSOP-8
ELM18822BA substitution
ELM18822BA Datasheet (PDF)
elm18822ba.pdf

(common drain)Dual N-channel MOSFET ELM18822BA-SGeneral description Features ELM18822BA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on) and low gate charge. Id=7A (Vgs=10V) Rds(on)
elm18814ba.pdf

(common drain)Dual N-channel MOSFET ELM18814BA-SGeneral description Features ELM18814BA-S uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=7.5A (Vgs=10V)operation with gate voltages as low as 1.8V and internal Rds(on)
elm18801ba.pdf

Dual P-channel MOSFETELM18801BA-SGeneral description Features ELM18801BA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on) and low gate charge. Internal Id=-4.7A (Vgs=-4.5V)ESD protection is included. Rds(on)
elm18806ba.pdf

(common drain)Dual N-channel MOSFET ELM18806BA-SGeneral description Features ELM18806BA-S uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=7A (Vgs=4.5V)operation with gate voltages as low as 1.8V and internal Rds(on)
Datasheet: ELM17408GA , ELM17412GA , ELM17600GA , ELM17800GA , ELM18801BA , ELM18806BA , ELM18810BA , ELM18814BA , IRFB3607 , ELM24603HA , ELM24604HA , ELM321504A , ELM321604A , ELM322806A , ELM323506A , ELM32400LA , ELM32401LA-S .
History: NVMFS5C466N | AFN04N60T220FT | HM70N78 | DMN5L06DMKQ | GSM9435WS | 2SK1734 | SM7510NSF
Keywords - ELM18822BA MOSFET datasheet
ELM18822BA cross reference
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History: NVMFS5C466N | AFN04N60T220FT | HM70N78 | DMN5L06DMKQ | GSM9435WS | 2SK1734 | SM7510NSF



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