All MOSFET. ELM32401LA-S Datasheet

 

ELM32401LA-S Datasheet and Replacement


   Type Designator: ELM32401LA-S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO-252
 

 ELM32401LA-S substitution

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ELM32401LA-S Datasheet (PDF)

 ..1. Size:982K  elm
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ELM32401LA-S

Single P-channel MOSFETELM32401LA-SGeneral description Features ELM32401LA-S uses advanced trench technology to Vds=-60Vprovide excellent Rds(on), low gate charge and low gate Id=-7A resistance. Rds(on)

 7.1. Size:604K  elm
elm32403la.pdf pdf_icon

ELM32401LA-S

Single P-channel MOSFETELM32403LA-SGeneral description Features ELM32403LA-S uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)

 7.2. Size:648K  elm
elm32404la.pdf pdf_icon

ELM32401LA-S

Single N-channel MOSFETELM32404LA-SGeneral description Features ELM32404LA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=12A resistance. Rds(on)

 7.3. Size:801K  elm
elm32409la-s.pdf pdf_icon

ELM32401LA-S

Single P-channel MOSFETELM32409LA-SGeneral description Features ELM32409LA-S uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-10A resistance. Rds(on)

Datasheet: ELM18822BA , ELM24603HA , ELM24604HA , ELM321504A , ELM321604A , ELM322806A , ELM323506A , ELM32400LA , AO4407 , ELM32402LA , ELM32403LA , ELM32404LA , ELM32405LA , ELM32407LA , ELM32408LA , ELM32409LA-S , ELM32412LA .

History: NVMTS0D6N04C

Keywords - ELM32401LA-S MOSFET datasheet

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 ELM32401LA-S equivalent finder
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