ELM32408LA Datasheet and Replacement
Type Designator: ELM32408LA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16 nC
trⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 175 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: TO-252
- MOSFET Cross-Reference Search
ELM32408LA Datasheet (PDF)
elm32408la.pdf

Single N-channel MOSFETELM32408LA-SGeneral description Features ELM32408LA-S uses advanced trench technology to Vds=40Vprovide excellent Rds(on), low gate charge and low gate Id=10A resistance. Rds(on)
elm32403la.pdf

Single P-channel MOSFETELM32403LA-SGeneral description Features ELM32403LA-S uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)
elm32404la.pdf

Single N-channel MOSFETELM32404LA-SGeneral description Features ELM32404LA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=12A resistance. Rds(on)
elm32409la-s.pdf

Single P-channel MOSFETELM32409LA-SGeneral description Features ELM32409LA-S uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-10A resistance. Rds(on)
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: WMK25N80M3 | BLP02N08-BA
Keywords - ELM32408LA MOSFET datasheet
ELM32408LA cross reference
ELM32408LA equivalent finder
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History: WMK25N80M3 | BLP02N08-BA



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