All MOSFET. ELM32416LA Datasheet

 

ELM32416LA Datasheet and Replacement


   Type Designator: ELM32416LA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 46 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO-252
 

 ELM32416LA substitution

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ELM32416LA Datasheet (PDF)

 ..1. Size:591K  elm
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ELM32416LA

Single N-channel MOSFETELM32416LA-SGeneral description Features ELM32416LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=46A resistance. Rds(on)

 7.1. Size:452K  elm
 elm32414la.pdf pdf_icon

ELM32416LA

Single N-channel MOSFETELM32414LA-SGeneral description Features ELM32414LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=35A resistance. Rds(on)

 7.2. Size:658K  elm
 elm32418la.pdf pdf_icon

ELM32416LA

Single N-channel MOSFETELM32418LA-SGeneral description Features ELM32418LA-S uses advanced trench technology to Vds=40Vprovide excellent Rds(on), low gate charge and low gate Id=20A resistance. Rds(on)

 7.3. Size:473K  elm
 elm32412la.pdf pdf_icon

ELM32416LA

Single N-channel MOSFETELM32412LA-SGeneral description Features ELM32412LA-S uses advanced trench technology to Vds=40Vprovide excellent Rds(on), low gate charge and low gate Id=12A resistance. Rds(on)

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Datasheet: ELM32403LA , ELM32404LA , ELM32405LA , ELM32407LA , ELM32408LA , ELM32409LA-S , ELM32412LA , ELM32414LA , STF13NM60N , ELM32418LA , ELM32420LA , ELM32422LA , ELM32424LA , ELM32428LA , ELM32430LA , ELM32434LA , ELM32D548A .

History: 2SK2898-01 | KP504A | AP0503GMT-HF | IXTH36P15P | SI2365EDS | AP4608S | KP743B1

Keywords - ELM32416LA MOSFET datasheet

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