All MOSFET. ELM33408CA Datasheet

 

ELM33408CA MOSFET. Datasheet pdf. Equivalent


   Type Designator: ELM33408CA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0508 Ohm
   Package: SOT-23

 ELM33408CA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ELM33408CA Datasheet (PDF)

 ..1. Size:599K  elm
 elm33408ca.pdf

ELM33408CA ELM33408CA

Single N-channel MOSFETELM33408CA-SGeneral description Features ELM33408CA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=3A resistance. Rds(on)

 7.1. Size:486K  elm
 elm33403ca.pdf

ELM33408CA ELM33408CA

Single P-channel MOSFETELM33403CA-SGeneral description Features ELM33403CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-4A resistance. Rds(on)

 7.2. Size:588K  elm
 elm33407ca.pdf

ELM33408CA ELM33408CA

Single P-channel MOSFETELM33407CA-SGeneral description Features ELM33407CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-3A resistance. Rds(on)

 7.3. Size:592K  elm
 elm33405ca.pdf

ELM33408CA ELM33408CA

Single P-channel MOSFETELM33405CA-SGeneral description Features ELM33405CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-2A resistance. Rds(on)

 7.4. Size:981K  elm
 elm33401ca-s.pdf

ELM33408CA ELM33408CA

Single P-channel MOSFETELM33401CA-SGeneral description Features ELM33401CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-3A resistance. Rds(on)

 7.5. Size:607K  elm
 elm33404ca.pdf

ELM33408CA ELM33408CA

Single N-channel MOSFETELM33404CA-SGeneral description Features ELM33404CA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=3A resistance. Rds(on)

 7.6. Size:599K  elm
 elm33402ca.pdf

ELM33408CA ELM33408CA

Single N-channel MOSFETELM33402CA-SGeneral description Features ELM33402CA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=3A resistance. Rds(on)

 7.7. Size:480K  elm
 elm33400ca.pdf

ELM33408CA ELM33408CA

Single N-channel MOSFETELM33400CA-SGeneral description Features ELM33400CA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=6A resistance. Rds(on)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SIHF624S

 

 
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