2SK880BL Datasheet and Replacement

2SK880 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK880 Audio Frequency Low Noise Amplifier Applications Unit: mm High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 High breakdown voltage: VGDS = -50 V Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k High input impedance: IGSS = -1 nA (max) at VGS = -30 V

2SK882 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK882 FM Tuner, VHF RF Amplifier Applications Unit: mm Low reverse transfer capacitance: Crss = 0.025 pF (typ.) Low noise figure: NF = 1.7dB (typ.) High power gain: G = 28dB (typ.) ps Recommend operation voltage: 5~15 V Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating Unit

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2SK881 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK881 FM Tuner Applications Unit: mmVHF Band Amplifier Applications Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) High forward transfer admittance: |Yfs| = 9 mS (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitGate-drain voltage VGDO -18 VGate current IG 10 mA