APM2054NV Datasheet and Replacement
Type Designator: APM2054NV
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: SOT223
APM2054NV substitution
APM2054NV Datasheet (PDF)
apm2054n.pdf

APM2054N N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/12A, RDS(ON)=35m(typ.) @ VGS=10VRDS(ON)=45m(typ.) @ VGS=4.5VRDS(ON)=110m(typ.) @ VGS=2.5V1 2 31 2 3 Super High Dense Cell Design High Power and Current Handling Capability G D SG D S TO-252, SOT-89 and SOT-223 Packages To
apm2054ndc.pdf

APM2054NDCwww.VBsemi.tw N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.022 at VGS = 4.5 V 6.8RoHS30 10 nC COMPLIANTAPPLICATIONS0.027 at VGS = 2.5 V 6.0 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwis
apm2055nu.pdf

APM2055NU N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/10A,D RDS(ON)=55m (Typ.) @ VGS=10VS RDS(ON)=75m (Typ.) @ VGS=4.5VG RDS(ON)=140m (Typ.) @ VGS=2.5V Super High Dense Cell DesignTop View of TO-252 Reliable and Rugged Lead Free and Green Devices AvailableD (RoHS Compliant)ApplicationsG Power Management in Desktop Computer o
Datasheet: ELM33405CA , ELM33407CA , ELM33408CA , ELM33410CA , 2SK880GR , 2SK880BL , 2SK1388 , APM2054ND , MMIS60R580P , APM2054NU , APM2513NU , APM2556NU , ARF446 , ARF447 , BUZ380 , CEP703AL , CEB703AL .
History: HTD360N10 | SIHF9Z24 | GT52N10T | KRF7703 | STU601S | CHT2302GP | NCEP40T15AGU
Keywords - APM2054NV MOSFET datasheet
APM2054NV cross reference
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APM2054NV replacement
History: HTD360N10 | SIHF9Z24 | GT52N10T | KRF7703 | STU601S | CHT2302GP | NCEP40T15AGU



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