All MOSFET. CMT04N60XN220 Datasheet

 

CMT04N60XN220 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CMT04N60XN220
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO220

 CMT04N60XN220 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CMT04N60XN220 Datasheet (PDF)

 6.1. Size:341K  champion
 cmt04n60.pdf

CMT04N60XN220 CMT04N60XN220

CMT04N60 POWER MOSFET GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to Higher Current Rating withstand high energy in the avalanche mode and switch Lower Rds(on)efficiently. This new high energy device also offers a Lower Capacitancesdrain-to-source diode with fast recovery time. Designed for Lower Total Gate Charge high voltage, high speed switc

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: DM8N65C | PP9C15AK

 

 
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