DG2N60-251 Specs and Replacement
Type Designator: DG2N60-251
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 40 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
Package: TO251
DG2N60-251 substitution
- MOSFET ⓘ Cross-Reference Search
DG2N60-251 datasheet
Detailed specifications: CEP703AL, CEB703AL, CMT04N60GN220, CMT04N60XN220, CMT04N60GN220FP, CMT04N60XN220FP, CMT04N60GN252, CMT04N60XN252, IRFP064N, DG2N60-252, DG2N60-220, DG2N60-220F, DG2N60-126, DG2N65-251, DG2N65-252, DG2N65-220, DG2N65-220F
Keywords - DG2N60-251 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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