All MOSFET. DG2N60-251 Datasheet

 

DG2N60-251 MOSFET. Datasheet pdf. Equivalent


   Type Designator: DG2N60-251
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
   Package: TO251

 DG2N60-251 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DG2N60-251 Datasheet (PDF)

 8.1. Size:1513K  jiangsu
 dg2n60.pdf

DG2N60-251 DG2N60-251

JiangSu Dongchen Electronics Technology Co.,LtdDG2N60N 201603-AN-CHANNEL ENHANCEMENT MODE MOSFET General DescriptionDG2N60N

 9.1. Size:1477K  jiangsu
 dg2n65.pdf

DG2N60-251 DG2N60-251

DG2N65V1.0N N-CHANNE ENHANCEMENT MODE MOSFET General Description DG2N65N

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: NTMS4177P

 

 
Back to Top