All MOSFET. DG2N65-220 Datasheet

 

DG2N65-220 MOSFET. Datasheet pdf. Equivalent


   Type Designator: DG2N65-220
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 39 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO220

 DG2N65-220 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DG2N65-220 Datasheet (PDF)

 8.1. Size:1477K  jiangsu
 dg2n65.pdf

DG2N65-220 DG2N65-220

DG2N65V1.0N N-CHANNE ENHANCEMENT MODE MOSFET General Description DG2N65N

 9.1. Size:1513K  jiangsu
 dg2n60.pdf

DG2N65-220 DG2N65-220

JiangSu Dongchen Electronics Technology Co.,LtdDG2N60N 201603-AN-CHANNEL ENHANCEMENT MODE MOSFET General DescriptionDG2N60N

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: FDN5632NF085

 

 
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