DG2N65-220 Specs and Replacement
Type Designator: DG2N65-220
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 39 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO220
DG2N65-220 substitution
- MOSFET ⓘ Cross-Reference Search
DG2N65-220 datasheet
Detailed specifications: CMT04N60XN252, DG2N60-251, DG2N60-252, DG2N60-220, DG2N60-220F, DG2N60-126, DG2N65-251, DG2N65-252, 20N60, DG2N65-220F, DG2N65-126, DG840, DG840F, DH100P30, DH100P30F, DH100P30B, DH100P30D
Keywords - DG2N65-220 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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