DG2N65-220F PDF and Equivalents Search

 

DG2N65-220F Specs and Replacement

Type Designator: DG2N65-220F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 23 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 39 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: TO220FP

DG2N65-220F substitution

- MOSFET ⓘ Cross-Reference Search

 

DG2N65-220F datasheet

 8.1. Size:1477K  jiangsu
dg2n65.pdf pdf_icon

DG2N65-220F

... See More ⇒

 9.1. Size:1513K  jiangsu
dg2n60.pdf pdf_icon

DG2N65-220F

... See More ⇒

Detailed specifications: DG2N60-251, DG2N60-252, DG2N60-220, DG2N60-220F, DG2N60-126, DG2N65-251, DG2N65-252, DG2N65-220, IRF540N, DG2N65-126, DG840, DG840F, DH100P30, DH100P30F, DH100P30B, DH100P30D, DH100P30I

Keywords - DG2N65-220F MOSFET specs

 DG2N65-220F cross reference

 DG2N65-220F equivalent finder

 DG2N65-220F pdf lookup

 DG2N65-220F substitution

 DG2N65-220F replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

↑ Back to Top
.