ISL9N310AD3 Datasheet and Replacement. Cross Reference Search

..1. Size:133K fairchild semi
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January 2002ISL9N310AD3/ISL9N310AD3STN-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETsGeneral Description FeaturesThis device employs a new advanced trench MOSFET Fast switchingtechnology and features low gate charge while maintaining rDS(ON) = 0.008 (Typ), VGS = 10Vlow on-resistance. rDS(ON) = 0.0115 (Typ), VGS = 4.5VOptimized for switching a

0.1. Size:1030K cn vbsemi
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ISL9N310AD3STwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETA

8.1. Size:249K fairchild semi
isl9n302as3st.pdf pdf_icon

April 2002ISL9N302AS3STN-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETsGeneral Description FeaturesThis device employs a new advanced trench MOSFET Fast switchingtechnology and features low gate charge while maintaining rDS(ON) =0.0019 (Typ), VGS =10Vlow on-resistance. rDS(ON) =0.0027 (Typ), VGS =4.5VOptimized for switching applications, this

8.2. Size:269K fairchild semi
isl9n303ap3.pdf pdf_icon

September 2002PWM OptimizedISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3N-Channel Logic Level UltraFET Trench MOSFETs30V, 75A, 3.2mGeneral Description FeaturesThis device employs a new advanced trench MOSFET Fast switchingtechnology and features low gate charge while maintaining rDS(ON) = 0.0026 (Typ), VGS = 10Vlow on-resistance. rDS(ON) = 0.004 (Typ), VGS =

8.3. Size:121K fairchild semi
isl9n302ap3.pdf pdf_icon

January 2002ISL9N302AP3N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETsGeneral Description FeaturesThis device employs a new advanced trench MOSFET Fast switchingtechnology and features low gate charge while maintaining rDS(ON) = 0.0019 (Typ), VGS = 10Vlow on-resistance. rDS(ON) = 0.0027 (Typ), VGS = 4.5VOptimized for switching applications,

8.4. Size:843K cn vbsemi
isl9n306ad3s.pdf pdf_icon

ISL9N306AD3Swww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETAB

8.5. Size:1031K cn vbsemi
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ISL9N308AD3www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABS

8.6. Size:861K cn vbsemi
isl9n306as3s.pdf pdf_icon

ISL9N306AS3Swww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0038 at VGS = 10 V 9830 82 nC0.0044 at VGS = 4.5 V 98APPLICATIONS OR-ing Server DC/DCDI2PAK D2PAK(TO-262) (TO-263)GGDSSV

8.7. Size:1030K cn vbsemi
isl9n308ad3st.pdf pdf_icon

ISL9N308AD3STwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETA

ISL9N310AD3 Datasheet (PDF)

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