JCS7N60F Specs and Replacement
Type Designator: JCS7N60F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 115 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO-220MF
JCS7N60F substitution
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JCS7N60F datasheet
jcs7n60bb jcs7n60sb jcs7n60cb jcs7n60fb.pdf
N R N-CHANNEL MOSFET JCS7N60B MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max 1.2 @Vgs=10V Qg-typ 25 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L... See More ⇒
Detailed specifications: FTP14N50C, FTA14N50C, IPA65R1K5CE, ISL9N310AD3, ISL9N310AD3ST, JCS7N60S, JCS7N60B, JCS7N60C, IRF4905, PHP95N03LT, PHB95N03LT, PHE95N03LT, STP100N6F7, STP100NF04L, SVF10N65CFJ, STP10NB20, STP10NB20FP
Keywords - JCS7N60F MOSFET specs
JCS7N60F cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IRFB16N60LPBF | FS2301 | CEK01N65 | 4N60CB | CJX3139K
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