SVF10N65CFJ MOSFET. Datasheet pdf. Equivalent
Type Designator: SVF10N65CFJ
Marking Code: 10N65CFJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 28.5 nC
trⓘ - Rise Time: 41.4 nS
Cossⓘ - Output Capacitance: 130 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO220FJ
SVF10N65CFJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVF10N65CFJ Datasheet (PDF)
svf10n65cfj.pdf
SVF10N65CFJ_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65CFJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand
svf10n65cf svf10n65ck svf10n65cfjh.pdf
SVF10N65CF/K/FJH 10A650V N 2SVF10N65CF/K/FJH N MOS F-CellTM VDMOS 13 1. 2.
svf10n65f svf10n65t.pdf
SVF10N65T/F_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch
svf10n65t svf10n65f svf10n65k svf10n65s svf10n65str.pdf
SVF10N65T/F/K/S 10A650V N 2SVF10N65T/F/K/S N MOS F-CellTM VDMOS 1 3
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .