All MOSFET. ELM33415CA Datasheet

 

ELM33415CA MOSFET. Datasheet pdf. Equivalent


   Type Designator: ELM33415CA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16.7 nC
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 185 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.051 Ohm
   Package: SOT-23

 ELM33415CA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ELM33415CA Datasheet (PDF)

 ..1. Size:355K  elm
 elm33415ca.pdf

ELM33415CA ELM33415CA

Single P-channel MOSFETELM33415CA-SGeneral description Features ELM33415CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-3.5A resistance. Rds(on)

 7.1. Size:423K  elm
 elm33412ca.pdf

ELM33415CA ELM33415CA

Single N-channel MOSFETELM33412CA-SGeneral description Features ELM33412CA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=6A resistance. Rds(on)

 7.2. Size:398K  elm
 elm33414ca.pdf

ELM33415CA ELM33415CA

Single N-channel MOSFETELM33414CA-SGeneral description Features ELM33414CA-S uses advanced trench technology Vds=60Vto provide excellent Rds(on), low gate charge and Id=300mA operation with gate voltages as low as 3.5V and internal Rds(on)

 7.3. Size:1575K  elm
 elm33416ca.pdf

ELM33415CA ELM33415CA

Single N-channel MOSFETELM33416CA-SGeneral description Features ELM33416CA-S uses advanced trench technology to Vds=100Vprovide excellent Rds(on), low gate charge and low gate Id=1.3A resistance. Rds(on)

 7.4. Size:485K  elm
 elm33410ca.pdf

ELM33415CA ELM33415CA

Single N-channel MOSFETELM33410CA-SGeneral description Features ELM33410CA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=5A resistance. Rds(on)

 7.5. Size:610K  elm
 elm33411ca.pdf

ELM33415CA ELM33415CA

Single P-channel MOSFETELM33411CA-SGeneral description Features ELM33411CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-3A resistance. Rds(on)

 7.6. Size:486K  elm
 elm33413ca.pdf

ELM33415CA ELM33415CA

Single P-channel MOSFETELM33413CA-SGeneral description Features ELM33413CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-4A resistance. Rds(on)

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: VBZE2810 | AP2330GN | CS3410BR | FDB8444 | FDB8870 | IRFSL52N15D | AOTF280A60L

 

 
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