All MOSFET. ELM33415CA Datasheet

 

ELM33415CA Datasheet and Replacement


   Type Designator: ELM33415CA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 185 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.051 Ohm
   Package: SOT-23
 

 ELM33415CA substitution

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ELM33415CA Datasheet (PDF)

 ..1. Size:355K  elm
elm33415ca.pdf pdf_icon

ELM33415CA

Single P-channel MOSFETELM33415CA-SGeneral description Features ELM33415CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-3.5A resistance. Rds(on)

 7.1. Size:423K  elm
elm33412ca.pdf pdf_icon

ELM33415CA

Single N-channel MOSFETELM33412CA-SGeneral description Features ELM33412CA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=6A resistance. Rds(on)

 7.2. Size:398K  elm
elm33414ca.pdf pdf_icon

ELM33415CA

Single N-channel MOSFETELM33414CA-SGeneral description Features ELM33414CA-S uses advanced trench technology Vds=60Vto provide excellent Rds(on), low gate charge and Id=300mA operation with gate voltages as low as 3.5V and internal Rds(on)

 7.3. Size:1575K  elm
elm33416ca.pdf pdf_icon

ELM33415CA

Single N-channel MOSFETELM33416CA-SGeneral description Features ELM33416CA-S uses advanced trench technology to Vds=100Vprovide excellent Rds(on), low gate charge and low gate Id=1.3A resistance. Rds(on)

Datasheet: STP10NB50 , STP10NB50FP , STP10NC50 , STP10NC50FP , ELM33411CA , ELM33412CA , ELM33413CA , ELM33414CA , IRLB4132 , ELM33416CA , ELM34400AA , ELM34401AA , ELM34402AA , ELM34403AA-N , ELM34404AA , ELM34405AA , ELM34406AA-N .

History: APT77N60BC6 | IXFC14N80P | CED02N6G | AU7N60S | SSF2300A | RSJ400N06FRA | SHD225502

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