All MOSFET. ELM34401AA Datasheet

 

ELM34401AA Datasheet and Replacement


   Type Designator: ELM34401AA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SOP-8
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ELM34401AA Datasheet (PDF)

 ..1. Size:423K  elm
 elm34401aa.pdf pdf_icon

ELM34401AA

Single P-channel MOSFETELM34401AA-NGeneral description Features ELM34401AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)

 7.1. Size:654K  elm
 elm34402aa.pdf pdf_icon

ELM34401AA

Single N-channel MOSFETELM34402AA-NGeneral description Features ELM34402AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=8A resistance. Rds(on)

 7.2. Size:605K  elm
 elm34404aa.pdf pdf_icon

ELM34401AA

Single N-channel MOSFETELM34404AA-NGeneral description Features ELM34404AA-N uses advanced trench technology to Vds=60Vprovide excellent Rds(on), low gate charge and low gate Id=5.5A resistance. Rds(on)

 7.3. Size:504K  elm
 elm34400aa.pdf pdf_icon

ELM34401AA

Single N-channel MOSFETELM34400AA-NGeneral description Features ELM34400AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=10A resistance. Rds(on)

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History: VBNC1303 | IRFS4010PBF

Keywords - ELM34401AA MOSFET datasheet

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