All MOSFET. ELM34407AA Datasheet

 

ELM34407AA MOSFET. Datasheet pdf. Equivalent


   Type Designator: ELM34407AA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18.5 nC
   trⓘ - Rise Time: 5.7 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: SOP-8

 ELM34407AA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ELM34407AA Datasheet (PDF)

 ..1. Size:625K  elm
 elm34407aa.pdf

ELM34407AA ELM34407AA

Single P-channel MOSFETELM34407AA-NGeneral description Features ELM34407AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)

 7.1. Size:654K  elm
 elm34402aa.pdf

ELM34407AA ELM34407AA

Single N-channel MOSFETELM34402AA-NGeneral description Features ELM34402AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=8A resistance. Rds(on)

 7.2. Size:605K  elm
 elm34404aa.pdf

ELM34407AA ELM34407AA

Single N-channel MOSFETELM34404AA-NGeneral description Features ELM34404AA-N uses advanced trench technology to Vds=60Vprovide excellent Rds(on), low gate charge and low gate Id=5.5A resistance. Rds(on)

 7.3. Size:504K  elm
 elm34400aa.pdf

ELM34407AA ELM34407AA

Single N-channel MOSFETELM34400AA-NGeneral description Features ELM34400AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=10A resistance. Rds(on)

 7.4. Size:986K  elm
 elm34403aa-n.pdf

ELM34407AA ELM34407AA

Single P-channel MOSFETELM34403AA-NGeneral description Features ELM34403AA-N uses advanced trench technology to Vds=-55Vprovide excellent Rds(on), low gate charge and low gate Id=-4.5A resistance. Rds(on)

 7.5. Size:249K  elm
 elm34409aa.pdf

ELM34407AA ELM34407AA

Single P-channel MOSFETELM34409AA-NGeneral description Features ELM34409AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-9A resistance. Rds(on)

 7.6. Size:423K  elm
 elm34401aa.pdf

ELM34407AA ELM34407AA

Single P-channel MOSFETELM34401AA-NGeneral description Features ELM34401AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)

 7.7. Size:612K  elm
 elm34405aa.pdf

ELM34407AA ELM34407AA

Single P-channel MOSFETELM34405AA-NGeneral description Features ELM34405AA-N uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-5.5A resistance. Rds(on)

 7.8. Size:420K  elm
 elm34408aa.pdf

ELM34407AA ELM34407AA

Single N-channel MOSFETELM34408AA-NGeneral description Features ELM34408AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=8A resistance. Rds(on)

 7.9. Size:981K  elm
 elm34406aa-n.pdf

ELM34407AA ELM34407AA

Single N-channel MOSFETELM34406AA-NGeneral description Features ELM34406AA-N uses advanced trench technology to Vds=40Vprovide excellent Rds(on), low gate charge and low gate Id=7.5A resistance. Rds(on)

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IPS60R210PFD7S | RJK6002DPH-E0 | UT3414 | FTK8N80P

 

 
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