ELM34414AA MOSFET. Datasheet pdf. Equivalent
Type Designator: ELM34414AA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 18 nC
trⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 530 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: SOP-8
ELM34414AA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ELM34414AA Datasheet (PDF)
elm34414aa.pdf
Single N-channel MOSFETELM34414AA-NGeneral description Features ELM34414AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=15A resistance. Rds(on)
elm34413aa-n.pdf
Single P-channel MOSFETELM34413AA-NGeneral description Features ELM34413AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-12A resistance. Rds(on)
elm34411aa.pdf
Single P-channel MOSFETELM34411AA-NGeneral description Features ELM34411AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-12A resistance. Rds(on)
elm34417aa.pdf
Single P-channel MOSFETELM34417AA-NGeneral description Features ELM34417AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-6A resistance. Rds(on)
elm34415aa.pdf
Single P-channel MOSFETELM34415AA-NGeneral description Features ELM34415AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-13A resistance. Rds(on)
elm34418aa.pdf
Single N-channel MOSFETELM34418AA-NGeneral description Features ELM34418AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=22A resistance. Rds(on)
elm34416aa.pdf
Single N-channel MOSFETELM34416AA-NGeneral description Features ELM34416AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=11A resistance. Rds(on)
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: VBZE4286 | IRFH8330PBF
History: VBZE4286 | IRFH8330PBF
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918