All MOSFET. ELM34417AA Datasheet

 

ELM34417AA Datasheet and Replacement


   Type Designator: ELM34417AA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOP-8
 

 ELM34417AA substitution

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ELM34417AA Datasheet (PDF)

 ..1. Size:561K  elm
 elm34417aa.pdf pdf_icon

ELM34417AA

Single P-channel MOSFETELM34417AA-NGeneral description Features ELM34417AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-6A resistance. Rds(on)

 7.1. Size:991K  elm
 elm34413aa-n.pdf pdf_icon

ELM34417AA

Single P-channel MOSFETELM34413AA-NGeneral description Features ELM34413AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-12A resistance. Rds(on)

 7.2. Size:613K  elm
 elm34411aa.pdf pdf_icon

ELM34417AA

Single P-channel MOSFETELM34411AA-NGeneral description Features ELM34411AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-12A resistance. Rds(on)

 7.3. Size:356K  elm
 elm34414aa.pdf pdf_icon

ELM34417AA

Single N-channel MOSFETELM34414AA-NGeneral description Features ELM34414AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=15A resistance. Rds(on)

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Datasheet: ELM34407AA , ELM34408AA , ELM34409AA , ELM34411AA , ELM34413AA-N , ELM34414AA , ELM34415AA , ELM34416AA , 18N50 , ELM34418AA , ELM34421AA , ELM34423AA , ELM34600AA , ELM34601AA , ELM34603AA , ELM34604AA , ELM34605AA-N .

History: AP150N03NF | AP150N04D

Keywords - ELM34417AA MOSFET datasheet

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