ELM34608AA Datasheet and Replacement
Type Designator: ELM34608AA
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 80 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
Package: SOP-8
- MOSFET Cross-Reference Search
ELM34608AA Datasheet (PDF)
elm34608aa.pdf

Complementary MOSFET ELM34608AA-NGeneral Description Features ELM34608AA-N uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=60V Vds=-60Vand low gate charge. Id=4.5A Id=-3.5A Rds(on)
elm34605aa-n.pdf

Complementary MOSFET ELM34605AA-NGeneral Description Features ELM34605AA-N uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=30V Vds=-30Vand low gate charge. Id=7A Id=-6A Rds(on)
elm34601aa.pdf

Complementary MOSFET ELM34601AA-NGeneral Description Features ELM34601AA-N uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=30V Vds=-30Vand low gate charge. Id=7A Id=-6A Rds(on)
elm34604aa.pdf

Complementary MOSFET ELM34604AA-NGeneral Description Features ELM34604AA-N uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=40V Vds=-40V and low gate charge. Id=7A Id=-5A Rds(on)
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: HTD600N06 | LKK47-06C5 | TSM4424CS | CED02N9 | APM4536K | IRFB3004GPBF | BRCS200P03DP
Keywords - ELM34608AA MOSFET datasheet
ELM34608AA cross reference
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History: HTD600N06 | LKK47-06C5 | TSM4424CS | CED02N9 | APM4536K | IRFB3004GPBF | BRCS200P03DP



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