ELM34608AA Datasheet and Replacement
Type Designator: ELM34608AA
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
Package: SOP-8
ELM34608AA substitution
ELM34608AA Datasheet (PDF)
elm34608aa.pdf

Complementary MOSFET ELM34608AA-NGeneral Description Features ELM34608AA-N uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=60V Vds=-60Vand low gate charge. Id=4.5A Id=-3.5A Rds(on)
elm34605aa-n.pdf

Complementary MOSFET ELM34605AA-NGeneral Description Features ELM34605AA-N uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=30V Vds=-30Vand low gate charge. Id=7A Id=-6A Rds(on)
elm34601aa.pdf

Complementary MOSFET ELM34601AA-NGeneral Description Features ELM34601AA-N uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=30V Vds=-30Vand low gate charge. Id=7A Id=-6A Rds(on)
elm34604aa.pdf

Complementary MOSFET ELM34604AA-NGeneral Description Features ELM34604AA-N uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=40V Vds=-40V and low gate charge. Id=7A Id=-5A Rds(on)
Datasheet: ELM34418AA , ELM34421AA , ELM34423AA , ELM34600AA , ELM34601AA , ELM34603AA , ELM34604AA , ELM34605AA-N , IRF520 , ELM34801AA , ELM34802AA-N , ELM34803AA-N , ELM34804AA , ELM34808AA , ELM34810AA , ELM34812AA , ELM35601KA .
History: PMZB790SN | SVT078R0ND | BSB165N15NZ3G | P0470ED | NCE80H12D | HTD600N06 | 2SK242
Keywords - ELM34608AA MOSFET datasheet
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History: PMZB790SN | SVT078R0ND | BSB165N15NZ3G | P0470ED | NCE80H12D | HTD600N06 | 2SK242



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