ELM34801AA Datasheet and Replacement
Type Designator: ELM34801AA
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 135 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SOP-8
ELM34801AA substitution
ELM34801AA Datasheet (PDF)
elm34801aa.pdf

Dual P-channel MOSFETELM34801AA-NGeneral description Features ELM34801AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-6A resistance. Rds(on)
elm34803aa-n.pdf

Dual P-channel MOSFETELM34803AA-NGeneral description Features ELM34803AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)
elm34802aa-n.pdf

Dual N-channel MOSFETELM34802AA-NGeneral description Features ELM34802AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=4.5A resistance. Rds(on)
elm34804aa.pdf

Dual N-channel MOSFETELM34804AA-NGeneral description Features ELM34804AA-N uses advanced trench technology to Vds=60Vprovide excellent Rds(on), low gate charge and low gate Id=4.5A resistance. Rds(on)
Datasheet: ELM34421AA , ELM34423AA , ELM34600AA , ELM34601AA , ELM34603AA , ELM34604AA , ELM34605AA-N , ELM34608AA , P60NF06 , ELM34802AA-N , ELM34803AA-N , ELM34804AA , ELM34808AA , ELM34810AA , ELM34812AA , ELM35601KA , ELM35603KA .
History: BSZ086P03NS3EG | 2SK3985-01 | AON4602 | MDP14N25CTP | AP2325GEN | RU40S4H | TPHR9003NL
Keywords - ELM34801AA MOSFET datasheet
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History: BSZ086P03NS3EG | 2SK3985-01 | AON4602 | MDP14N25CTP | AP2325GEN | RU40S4H | TPHR9003NL



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