All MOSFET. ELM34802AA-N Datasheet

 

ELM34802AA-N Datasheet and Replacement


   Type Designator: ELM34802AA-N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
   Package: SOP-8
 

 ELM34802AA-N substitution

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ELM34802AA-N Datasheet (PDF)

 ..1. Size:775K  elm
 elm34802aa-n.pdf pdf_icon

ELM34802AA-N

Dual N-channel MOSFETELM34802AA-NGeneral description Features ELM34802AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=4.5A resistance. Rds(on)

 7.1. Size:1071K  elm
 elm34803aa-n.pdf pdf_icon

ELM34802AA-N

Dual P-channel MOSFETELM34803AA-NGeneral description Features ELM34803AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)

 7.2. Size:416K  elm
 elm34801aa.pdf pdf_icon

ELM34802AA-N

Dual P-channel MOSFETELM34801AA-NGeneral description Features ELM34801AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-6A resistance. Rds(on)

 7.3. Size:605K  elm
 elm34804aa.pdf pdf_icon

ELM34802AA-N

Dual N-channel MOSFETELM34804AA-NGeneral description Features ELM34804AA-N uses advanced trench technology to Vds=60Vprovide excellent Rds(on), low gate charge and low gate Id=4.5A resistance. Rds(on)

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Datasheet: ELM34423AA , ELM34600AA , ELM34601AA , ELM34603AA , ELM34604AA , ELM34605AA-N , ELM34608AA , ELM34801AA , IRF730 , ELM34803AA-N , ELM34804AA , ELM34808AA , ELM34810AA , ELM34812AA , ELM35601KA , ELM35603KA , ELM35604KA .

History: HM80N80 | IRFZ34NSPBF | IRFU010 | SVGP157R5NT | P2003EVT | IXFH42N50P2 | IPA60R280CFD7

Keywords - ELM34802AA-N MOSFET datasheet

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