ELM34803AA-N MOSFET Datasheet: P-Ch, 30V, 8A. Full specification with pinout and replacement list

ELM34803AA-N Specs and Replacement

Type Designator: ELM34803AA-N

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 334 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: SOP-8

ELM34803AA-N substitution

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ELM34803AA-N datasheet

..1. Size:1071K elm
elm34803aa-n.pdf pdf_icon

Dual P-channel MOSFET ELM34803AA-N General description Features ELM34803AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on) ... See More ⇒

7.1. Size:775K elm
elm34802aa-n.pdf pdf_icon

Dual N-channel MOSFET ELM34802AA-N General description Features ELM34802AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=4.5A resistance. Rds(on) ... See More ⇒

7.2. Size:416K elm
elm34801aa.pdf pdf_icon

Dual P-channel MOSFET ELM34801AA-N General description Features ELM34801AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-6A resistance. Rds(on) ... See More ⇒

7.3. Size:605K elm
elm34804aa.pdf pdf_icon

Dual N-channel MOSFET ELM34804AA-N General description Features ELM34804AA-N uses advanced trench technology to Vds=60V provide excellent Rds(on), low gate charge and low gate Id=4.5A resistance. Rds(on) ... See More ⇒