ELM36402EA Datasheet and Replacement
Type Designator: ELM36402EA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 6.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 290 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: SOT-26
ELM36402EA Datasheet (PDF)
elm36402ea.pdf

Single N-channel MOSFETELM36402EA-SGeneral description Features ELM36402EA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=6.5A resistance. Rds(on)
elm36403ea.pdf

Single P-channel MOSFETELM36403EA-SGeneral description Features ELM36403EA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-5A resistance. Rds(on)
elm36400ea.pdf

Single N-channel MOSFETELM36400EA-SGeneral description Features ELM36400EA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=7A resistance. Rds(on)
elm36405ea.pdf

Single P-channel MOSFETELM36405EA-SGeneral description Features ELM36405EA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-5A resistance. Rds(on)
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: JCS86N25ABT | MTP7N20 | UPA1724 | AP6679BMT | SVFP10N60CFJD | APM7328K | IRFW630B
Keywords - ELM36402EA MOSFET datasheet
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History: JCS86N25ABT | MTP7N20 | UPA1724 | AP6679BMT | SVFP10N60CFJD | APM7328K | IRFW630B



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