ELM53403CA MOSFET. Datasheet pdf. Equivalent
Type Designator: ELM53403CA
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 3.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 5 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 45 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm
Package: SOT-23
ELM53403CA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ELM53403CA Datasheet (PDF)
elm53403ca.pdf
Single P-channel MOSFETELM53403CA-SGeneral description Features ELM53403CA-S uses advanced trench technology to Vds=-60Vprovide excellent Rds(on), low gate charge and low gate Id=-3.6A resistance. Rds(on)
elm53402ca.pdf
Single N-channel MOSFETELM53402CA-SGeneral description Features ELM53402CA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=3.6Aresistance. Rds(on)
elm53401ca.pdf
Single P-channel MOSFETELM53401CA-SGeneral description Features ELM53401CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-1.8A resistance. Rds(on)
elm53405ca-s.pdf
Single P-channel MOSFETELM53405CA-SGeneral description Features ELM53405CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-3.6A resistance. Rds(on)
elm53406ca.pdf
Single N-channel MOSFETELM53406CA-SGeneral description Features ELM53406CA-S uses advanced trench technology to Vds=60Vprovide excellent Rds(on), low gate charge and low gate Id=3.6A (Vgs=10V)resistance. Rds(on)
elm53400ca.pdf
Single N-channel MOSFETELM53400CA-SGeneral description Features ELM53400CA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=1.8A (Vgs=4.5V)resistance. Rds(on)
elm53404ca-s.pdf
Single N-channel MOSFETELM53404CA-SGeneral description Features ELM53404CA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=3.6Aresistance. Rds(on)
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: IXFN102N30P | IXFM6N100
History: IXFN102N30P | IXFM6N100
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918