EM6K33
MOSFET. Datasheet pdf. Equivalent
Type Designator: EM6K33
Marking Code: K33
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.12
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 0.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 6
nS
Cossⓘ -
Output Capacitance: 6
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.2
Ohm
Package: EMT6
EM6K33
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
EM6K33
Datasheet (PDF)
..1. Size:147K rohm
em6k33.pdf
1.2V Drive Nch + Nch MOSFET EM6K33 Structure Dimensions (Unit : mm)ilicon N-channel MOSFET Features 1) High speed switing. 2) Small package(EMT6). 3) Ultra low voltage drive(1.2V drive). Application Switching Abbreviated symbol : K33Packaging specifications Inner circuit Package Taping(6) (5) (4)TypeCode T2R1Basic order
9.1. Size:141K rohm
em6k34.pdf
0.9V Drive Nch + Nch MOSFET EM6K34 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET EMT6(6) (5) (4)Features1) High speed switing.(1) (2) (3)2) Small package(EMT6).3)Ultra low voltage drive(0.9V drive).Abbreviated symbol : K34 ApplicationSwitching Inner circuit(6) (5) (4) Packaging specifications1Package TapingTypeCode T2R 2
9.2. Size:144K rohm
em6k31.pdf
2.5V Drive Nch + Nch MOSFET EM6K31 Dimensions (Unit : mm) StructureSilicon N-channel MOSFET6 5 4Features1) High speed switing.2) Small package(EMT6).3) Low voltage drive(2.5V drive).Abbreviated symbol : K31 ApplicationSwitching Packaging specifications Inner circuit(6) (5) (4)Package TapingTypeCode T2R1Basic ordering unit (pieces) 800
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