F10W50C Specs and Replacement
Type Designator: F10W50C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 260 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO-3P
F10W50C substitution
- MOSFET ⓘ Cross-Reference Search
F10W50C datasheet
Detailed specifications: EMH2418R, ES6U2, ES6U3, ES6U41, ES6U42, F10F50VX2, F10V50VX2, F10W50, AON7410, F10W90HVX2, F11F60C3M, F11F60CPM, F11F80C3M, F11S80C3, F12F50VX2, F12W50VX2, F15F60C3M
Keywords - F10W50C MOSFET specs
F10W50C cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: MS7N60 | AP10P10GJ | IPD048N06L3 | BUK952R3-40E | WM4C62160A
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