F12F50VX2 Specs and Replacement
Type Designator: F12F50VX2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 270 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: TO-220F
F12F50VX2 substitution
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F12F50VX2 datasheet
2sk2475 f12f50vx2.pdf
SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK2475 Case FTO-220 (Unit mm) (F12F50VX2) 500V 12A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. APPLICATION Switching power supply of AC 100V input High voltage power supply Inverter ... See More ⇒
Detailed specifications: F10V50VX2, F10W50, F10W50C, F10W90HVX2, F11F60C3M, F11F60CPM, F11F80C3M, F11S80C3, IRF530, F12W50VX2, F15F60C3M, F15W50VX2, F16F60CPM, F20F60C3M, F20S60C3, F20W50VX2, F20W60C3
Keywords - F12F50VX2 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: BUK752R7-60E | IRFI530NPBF
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