F20W60C3 Specs and Replacement
Type Designator: F20W60C3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 780 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO-3P
F20W60C3 substitution
- MOSFET ⓘ Cross-Reference Search
F20W60C3 datasheet
Detailed specifications: F12F50VX2, F12W50VX2, F15F60C3M, F15W50VX2, F16F60CPM, F20F60C3M, F20S60C3, F20W50VX2, BS170, F21F60CPM, F24W60C3, F25F60CPM, F31W60CP, F35W60C3, F39W60CP, F3F90HVX2, F3S90HVX2
Keywords - F20W60C3 MOSFET specs
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