F47W60C3 Specs and Replacement
Type Designator: F47W60C3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 47 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 140 nS
Cossⓘ - Output Capacitance: 2200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO-3P
F47W60C3 substitution
- MOSFET ⓘ Cross-Reference Search
F47W60C3 datasheet
Detailed specifications: F25F60CPM, F31W60CP, F35W60C3, F39W60CP, F3F90HVX2, F3S90HVX2, F3V50VX2, F3V90HVX2, 20N50, F4F60VX2, F5018-S, F5020-S, F5041, F5042, F5042-S, F5043, F5043-S
Keywords - F47W60C3 MOSFET specs
F47W60C3 cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: PSMN1R4-30YLD | SI3493BDV | PSMN1R4-40YLD | AS3400
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